Mini LED背光

電視/顯示器

Mini LED 分區調光直下式背光

行家光電啟用下一代全屏幕和窄光學距離(OD 5mm)之背光設計,以數千顆 mini LED 作為背光源,採用多區亮度控制和廣色域量子點技術,實現更高的對比度(1,000,000 :1) 和更生動的色彩表現(REC. 2020 >95%),可與 OLED 顯示器相媲美,甚至超越OLED的顏色表現。此外,可以實現更高的亮度(>1000 nits),而不會出現OLED常見的圖像烙屏和壽命問題。

Mini LED Light Source & Backlight Panel

Mini LED Light Source: mNCSP1212

  • Blue / White light
  • NCSP size:1.2 x 1.2 mm
  • Mini LED Chip size:06 x 20 mil, 10 x 20 mil
  • Patented Top Diffusive Lens for large batwing viewing angle : 170°
  • Fanout PAD compatible with conventional SMT process
  • Excellent overdrive capability for high reliability and cost effectiveness

27″ / 32″ Mini LED Backlight Panel

  • Support 1152 local dimming zones
  • Curved backlight panel with mNCSP1212 Package-On-Board (POB)
  • Support Driver-On-Board (DOB) design
  • OD 3 mm with ultra large LED pitch 10 mm
  • Backlight brightness >20,000 nits

筆記型電腦

Mini LED 分區調光直下式背光

筆記型電腦需要更薄的 Mini LED 背光。我們使用藍光 Chip-on Board (COB) Mini LED背光板技術,並通過量子點薄膜來實現廣色域,以及藉由分區調光來實現高對比度。

Mini LED背光 Panel

Mini LED背光 Panel

  • Blue chip-on-board (COB) backlight panel
  • Mini LED Chip size:05 x 09 / 06 x 20 mil
  • Panel size:17.3″ / 16″ / 15.6″
  • Zero OD (0mm) with large LED pitch 4 mm
  • Backlight brightness >17,000 nits
  • COB mass transfer technology – 99.99% SMT yield rate
  • 250 um planarized encapsulant layer on COB – the uniformity of the encapsulant layer is controlled within +/- 30um

智慧型手錶

Mini LED 分區調光直下式背光

高精度和高速Mini LED巨量轉移打件技術,使Mini LED背光面板技術可於穿戴設備液晶屏幕實現。 Mini LED 顯示屏改善了全彩方案並降低了面板功耗,以提升電池待機時間。

Mini LED Light Source & Backlight Panel

Mini LED Light Source: mCSP0505

  • White light
  • CSP size:0.5 x 0.5 mm
  • Chip size:05 x 09 mil
  • Patented Top Diffusive Lens for large batwing viewing angle : 170°
  • Excellent overdrive capability for high reliability and cost effectiveness

Mini LED Backlight Panel

  • White / Blue chip-on-board (COB) backlight panel
  • Panel size:1.2″ ~ 1.7″
  • Zero OD (0mm) with large LED pitch 1.5 mm
  • Power savings up to 30% with local dimming
  • COB mass transfer technology – 99.99% SMT yield rate
  • 250 um planarized encapsulant layer on COB – the uniformity of the encapsulant layer is controlled within +/- 30um